PECVD tube furnace, plasma-enhanced chemical vapor deposition tube furnace

The design of the PECVD system is intended to lower the reaction temperature in traditional chemical vapor deposition. A radio frequency induction device is installed before the traditional chemical vapor deposition to ionize the reaction gas, generating a plasma. The high reactivity of the plasma is due to the fact that the high reactivity of the plasma accelerates the reaction process. This system is called PECVD.

This model is a Bonner product, integrating the majority of advantages from PECVD furnace systems and adding a preheat zone before the PECVD furnace system. Tests show fast deposition rates, high film quality, fewer holes, and no cracking. Equipped with an AISO fully automatic intelligent control system, it is easy to operate and powerful in function.

The PECVD furnace has a wide range of applications: metal films, ceramic films, composite films, and continuous growth of various films. It is easy to add functionalities and can be expanded with plasma cleaning and etching capabilities.

PECVD Tubular Furnace Features

• High Film Deposition Rate: Utilizing radio frequency glow discharge technology, the deposition rate of the film is significantly increased, reaching up to 1000s.

• High uniformity over large area: our multi-point radio frequency feeding technology, special airway distribution, and heating techniques result in a film uniformity index of 8%.

• High Concentration: The semiconductor industry utilizing design concepts, a deviation between substrates less than 2%.

• High process stability: Highly stable equipment ensures a continuous and stable process.

PECVD Tube Furnace Standard Accessories

• 4 tubes

• 1 furnace tube

• Vacuum pump 1 piece

• 2 vacuum-sealed flanges

• Vacuum Gauge 1 pc

• Gas Transmission and Vacuum Pumps

• RF Plasma Equipment

• Optional Accessories

• Quick-disconnect flange, tee flange

• 7-inch High-Definition Touchscreen